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HUF75639P3-F102
onsemi

HUF75639P3-F102

MFR #HUF75639P3-F102

FPN#HUF75639P3-F102-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 100 V 56A (Tc) 200W (Tc) Through Hole, TO-220-3
Datasheet
46495-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameHUF75639P3
Packaging TypeTube
Packaging Quantity800
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage100V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance2000pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current56A (Tc)
Maximum Drain to Source Resistance25 mOhm @ 56A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation200W (Tc)
Maximum Pulse Drain CurrentN/A
Maximum Total Gate Charge130nC
Maximum Total Gate Charge Test Voltage20V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-220-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge24nC
Typical Gate to Source Charge9.8nC