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HUF75321D3ST
onsemi

HUF75321D3ST

MFR #HUF75321D3ST

FPN#HUF75321D3ST-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 55V 20A (Tc) TO-252-3 T/R
Datasheet
97766-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameHUF75321D3ST
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage55V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance680pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current20A (Tc)
Maximum Drain to Source Resistance36 mOhm @ 20A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation93W (Tc)
Maximum Pulse Drain CurrentN/A
Maximum Total Gate Charge44nC
Maximum Total Gate Charge Test Voltage20V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge9nC
Typical Gate to Source Charge3nC