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HGTP5N120BND
onsemi

HGTP5N120BND

MFR #HGTP5N120BND

FPN#HGTP5N120BND-FL

MFRonsemi

Part DescriptionIGBT-Single 1.2kV 21A 167W TO-220-3 Tube
Datasheet
102531-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameHGTP5N120BND
Packaging TypeTube
Packaging Quantity800
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
ConfigurationSingle
Gate Charge53nC
IGBT TypeNPT
Input TypeStandard
Life Cycle StatusObsolete
Maximum Collector Current21A
Maximum Collector Emitter Breakdown Voltage1.2kV
Maximum Collector Emitter Saturation Voltage2.7V @ 15V, 5A
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature150°C
Maximum Power Dissipation167W
Maximum Switching FrequencyN/A
Minimum Junction Temperature-55°C
Minimum Switching FrequencyN/A
Package TypeTO-220-3
Pulsed Collector Current40A
Reverse Recovery Time65ns
Switching Off Delay Time160ns
Switching Off Energy390µJ
Switching On Delay Time22ns
Switching On Energy450µJ
Technology TypeN/A