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HGTP12N60C3D
onsemi

HGTP12N60C3D

MFR #HGTP12N60C3D

FPN#HGTP12N60C3D-FL

MFRonsemi

Part DescriptionIGBT 600 V 24 A 104 W Through Hole TO-220-3
Datasheet
46320-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameHGTP12N60C3D
Packaging TypeTube
Packaging Quantity800
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationSingle
Gate Charge48nC
IGBT TypeN/A
Input TypeStandard
Life Cycle StatusObsolete
Maximum Collector Current24A
Maximum Collector Emitter Breakdown Voltage600V
Maximum Collector Emitter Saturation Voltage2V @ 15V, 110A
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature150°C
Maximum Power Dissipation104W
Maximum Switching FrequencyN/A
Minimum Junction Temperature-40°C
Minimum Switching FrequencyN/A
Package TypeTO-220-3
Pulsed Collector Current96A
Reverse Recovery Time40ns
Switching Off Delay Time270ns
Switching Off Energy900µJ
Switching On Delay Time28ns
Switching On Energy380µJ
Technology TypeN/A