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onsemi

HGTG30N60C3D

MFR #HGTG30N60C3D

FPN#HGTG30N60C3D-FL

MFRonsemi

Part DescriptionIGBT 600 V 63 A 208 W Through Hole TO-247-3
Datasheet
46317-Datasheet
Quote Onlymore info
Multiples of: 450more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameHGTG30N60C3D
Packaging TypeTube
Packaging Quantity450
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
ConfigurationSingle
Gate Charge250nC
IGBT TypeN/A
Input TypeStandard
Life Cycle StatusObsolete
Maximum Collector Current63A
Maximum Collector Emitter Breakdown Voltage600V
Maximum Collector Emitter Saturation Voltage1.8V @ 15V, 30A
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation208W
Maximum Switching FrequencyN/A
Minimum Junction Temperature-40°C (TJ)
Minimum Operating TemperatureN/A
Minimum Switching FrequencyN/A
Package TypeTO-247-3LD
Pulsed Collector Current252A
Reverse Recovery Time60ns
Switching Off Delay TimeN/A
Switching Off EnergyN/A
Switching On Delay TimeN/A
Switching On EnergyN/A
Technology TypeN/A