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onsemi

HGTG30N60A4D

MFR #HGTG30N60A4D

FPN#HGTG30N60A4D-FL

MFRonsemi

Part DescriptionIGBT 600V 75A 463W Through Hole, TO-247-3
Datasheet
193174-Datasheet
Quote Onlymore info
Multiples of: 450more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameHGTG30N60A4D
Packaging TypeTube
Packaging Quantity450
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package TypeTO-247-3LD
ConfigurationSingle
Gate Charge225nC
IGBT TypeN/A
Input TypeStandard
Maximum Collector Current70A
Maximum Collector Emitter Breakdown Voltage600V
Maximum Collector Emitter Saturation Voltage2.6V @ 15V, 30A
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation463W
Maximum Switching FrequencyN/A
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Minimum Switching FrequencyN/A
Pulsed Collector Current240A
Reverse Recovery Time55ns
Switching Off Delay Time150ns
Switching Off Energy240µJ
Switching On Delay Time25ns
Switching On Energy280µJ
Technology TypeN/A