(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
onsemi

HGTG20N60B3

MFR #HGTG20N60B3

FPN#HGTG20N60B3-FL

MFRonsemi

Part DescriptionIGBT Transistor 600V 40A 165W Through Hole, TO-247-3
Datasheet
46314-Datasheet
Quote Onlymore info
Multiples of: 450more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameHGTG20N60B3
Packaging TypeTube
Packaging Quantity450
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationSingle
Gate Charge135nC
IGBT TypeN/A
Input TypeStandard
Life Cycle StatusObsolete
Maximum Collector Current40A
Maximum Collector Emitter Breakdown Voltage600V
Maximum Collector Emitter Saturation Voltage2V @ 15V, 20A
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation165W
Maximum Switching FrequencyN/A
Minimum Junction Temperature-40°C (TJ)
Minimum Operating TemperatureN/A
Minimum Switching FrequencyN/A
Package TypeTO-247-3LD
Pulsed Collector Current160A
Reverse Recovery TimeN/A
Switching Off Delay Time220ns
Switching Off Energy1.05mJ
Switching On Delay Time25ns
Switching On Energy475µJ
Technology TypeN/A