onsemi
HGTG18N120BN
MFR #HGTG18N120BN
FPN#HGTG18N120BN-FL
MFRonsemi
Part DescriptionIGBT NPT 1200 V 54 A 390 W Through Hole TO-247-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | HGTG18N120BN |
| Packaging Type | Tube |
| Packaging Quantity | 450 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Configuration | Single |
| Gate Charge | 165nC |
| IGBT Type | NPT |
| Input Type | Standard |
| Life Cycle Status | Obsolete |
| Maximum Collector Current | 54A |
| Maximum Collector Emitter Breakdown Voltage | 1.2kV |
| Maximum Collector Emitter Saturation Voltage | 2.7V @ 15V, 18A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 390W |
| Maximum Switching Frequency | N/A |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Minimum Switching Frequency | N/A |
| Package Type | TO-247-3LD |
| Pulsed Collector Current | 165A |
| Reverse Recovery Time | N/A |
| Switching Off Delay Time | 170ns |
| Switching Off Energy | 1.8mJ |
| Switching On Delay Time | 23ns |
| Switching On Energy | 800µJ |
| Technology Type | N/A |