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onsemi

HGTG18N120BN

MFR #HGTG18N120BN

FPN#HGTG18N120BN-FL

MFRonsemi

Part DescriptionIGBT NPT 1200 V 54 A 390 W Through Hole TO-247-3
Datasheet
46313-Datasheet
Quote Onlymore info
Multiples of: 30more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameHGTG18N120BN
Packaging TypeTube
Packaging Quantity450
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationSingle
Gate Charge165nC
IGBT TypeNPT
Input TypeStandard
Life Cycle StatusObsolete
Maximum Collector Current54A
Maximum Collector Emitter Breakdown Voltage1.2kV
Maximum Collector Emitter Saturation Voltage2.7V @ 15V, 18A
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation390W
Maximum Switching FrequencyN/A
Minimum Junction Temperature-55°C (TJ)
Minimum Switching FrequencyN/A
Package TypeTO-247-3LD
Pulsed Collector Current165A
Reverse Recovery TimeN/A
Switching Off Delay Time170ns
Switching Off Energy1.8mJ
Switching On Delay Time23ns
Switching On Energy800µJ
Technology TypeN/A