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onsemi

HGTG11N120CND

MFR #HGTG11N120CND

FPN#HGTG11N120CND-FL

MFRonsemi

Part DescriptionIGBT NPT 1200V 43A TO-247-3
Datasheet
46311-Datasheet
Quote Onlymore info
Multiples of: 450more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameHGTG11N120CND
Packaging TypeTube
Packaging Quantity450
Lifecycle StatusActive
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package TypeTO-247-3LD
ConfigurationSingle
Gate Charge100nC
IGBT TypeNPT
Input TypeStandard
Maximum Collector Current43A
Maximum Collector Emitter Breakdown Voltage1.2kV
Maximum Collector Emitter Saturation Voltage2.4V @ 15V, 11A
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature150°C
Maximum Operating TemperatureN/A
Maximum Power Dissipation298W
Maximum Switching FrequencyN/A
Minimum Junction Temperature-55°C
Minimum Operating TemperatureN/A
Minimum Switching FrequencyN/A
Pulsed Collector Current80A
Reverse Recovery Time70ns
Switching Off Delay Time180ns
Switching Off Energy1.3mJ
Switching On Delay Time23ns
Switching On Energy950µJ
Technology TypeN/A