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HGT1S12N60A4DS
onsemi

HGT1S12N60A4DS

MFR #HGT1S12N60A4DS

FPN#HGT1S12N60A4DS-FL

MFRonsemi

Part DescriptionIGBT 600 V 54 A 167 W Surface Mount DPAK (TO-263)
Datasheet
46310-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameHGT1S12N60A4DS
Packaging TypeTube
Packaging Quantity800
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
ConfigurationSingle
Gate Charge120nC
IGBT TypeN/A
Input TypeStandard
Life Cycle StatusObsolete
Maximum Collector Current54A
Maximum Collector Emitter Breakdown Voltage600V
Maximum Collector Emitter Saturation Voltage2.7V @ 15V, 12A
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation167W
Maximum Switching FrequencyN/A
Minimum Junction Temperature-55°C (TJ)
Minimum Switching FrequencyN/A
Package TypeTO-263 (D2PAK)
Pulsed Collector Current96A
Reverse Recovery Time30ns
Switching Off Delay Time96ns
Switching Off Energy50µJ
Switching On Delay Time17ns
Switching On Energy55µJ
Technology TypeN/A