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HGT1S10N120BNS
onsemi

HGT1S10N120BNS

MFR #HGT1S10N120BNS

FPN#HGT1S10N120BNS-FL

MFRonsemi

Part DescriptionIGBT-Single 1.2kV 35A 298W TO-263-3 Tube
Datasheet
118474-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameHGT1S10N120BNS
Packaging TypeTube
Packaging Quantity800
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationSingle
Gate Charge100nC
IGBT TypeNPT
Input TypeStandard
Life Cycle StatusObsolete
Maximum Collector Current35A
Maximum Collector Emitter Breakdown Voltage1.2kV
Maximum Collector Emitter Saturation Voltage2.7V @ 15V, 10A
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation298W
Maximum Switching FrequencyN/A
Minimum Junction Temperature-55°C (TJ)
Minimum Switching FrequencyN/A
Package TypeTO-263 (D2PAK)
Pulsed Collector Current80A
Reverse Recovery TimeN/A
Switching Off Delay Time165ns
Switching Off Energy800µJ
Switching On Delay Time23ns
Switching On Energy320µJ
Technology TypeN/A