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FQU8P10TU
onsemi

FQU8P10TU

MFR #FQU8P10TU

FPN#FQU8P10TU-FL

MFRonsemi

Part DescriptionP-Channel 100 V 6.6A (Tc) 2.5W (Ta), 44W (Tc) Through Hole I-PAK
Datasheet
45521-Datasheet
Quote Onlymore info
Multiples of: 5040more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFQU8P10
Packaging TypeTube
Packaging Quantity5040
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage100V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance470pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current6.6A (Tc)
Maximum Drain to Source Resistance530 mOhm @ 3.3A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 44W (Tc)
Maximum Pulse Drain Current26.4A
Maximum Total Gate Charge15nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeI-Pak
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge6.4nC
Typical Gate to Source Charge3nC