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FQU13N06LTU-WS
onsemi

FQU13N06LTU-WS

MFR #FQU13N06LTU-WS

FPN#FQU13N06LTU-WS-FL

MFRonsemi

Part DescriptionN-Channel 60 V 11A (Tc) 2.5W (Ta), 28W (Tc) Through Hole I-PAK, TO-251AA
Datasheet
45514-Datasheet
Quote Onlymore info
Multiples of: 75more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFQU13N06L
Packaging TypeTube
Packaging Quantity75
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance350pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current11A (Tc)
Maximum Drain to Source Resistance115 mOhm @ 5.5A, 10V
Maximum Gate to Source Threshold Voltage2.5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation2.5W (Ta), 28W (Tc)
Maximum Pulse Drain Current44A
Maximum Total Gate Charge6.4nC
Maximum Total Gate Charge Test Voltage5V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package TypeI-Pak
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.7nC
Typical Gate to Source Charge1.6nC