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FQT7N10LTF
onsemi

FQT7N10LTF

MFR #FQT7N10LTF

FPN#FQT7N10LTF-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 100V 1.7A (Tc) 2W (Tc) Surface Mount, TO-261-4
Datasheet
45513-Datasheet
Quote Onlymore info
Multiples of: 4000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFQT7N10L
Packaging TypeTape and Reel
Packaging Quantity4000
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package TypeSOT-223
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage100V
Drive Voltage5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance290pF
Input Capacitance Test Voltage25V
Maximum Continuous Drain Current1.7A (Ta)
Maximum Drain to Source Resistance350 mOhm @ 850mA, 10V
Maximum Gate to Source Threshold Voltage2V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation2W (Ta)
Maximum Pulse Drain Current6.8A
Maximum Total Gate Charge6nC
Maximum Total Gate Charge Test Voltage5V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.6nC
Typical Gate to Source Charge1nC