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FQT5P10TF
onsemi

FQT5P10TF

MFR #FQT5P10TF

FPN#FQT5P10TF-FL

MFRonsemi

Part DescriptionMOSFET P-CH 100V 1A SOT223-4
Datasheet
165664-Datasheet
Quote Onlymore info
Multiples of: 4000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFQT5P10
Packaging TypeTape and Reel
Packaging Quantity4000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage100V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance250pF
Input Capacitance Test Voltage25V
Life Cycle StatusLast Time Buy
Maximum Continuous Drain Current1A (Tc)
Maximum Drain to Source Resistance1.05 Ohm @ 500mA, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2W (Tc)
Maximum Pulse Drain Current4A
Maximum Total Gate Charge8.2nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeSOT-223
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge3nC
Typical Gate to Source Charge1.7nC