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FQT5P10TF
MFR #FQT5P10TF
FPN#FQT5P10TF-FL
MFRonsemi
Part DescriptionMOSFET P-CH 100V 1A SOT223-4
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors | 
| Category | Discrete Semiconductors | 
| Sub Category | Transistors | 
| Family Name | FQT5P10 | 
| Packaging Type | Tape and Reel | 
| Packaging Quantity | 4000 | 
| Lifecycle Status | Obsolete | 
| RoHS | Compliant with Exemption | 
| RoHS Exemption Type | 7(a), RoHS (2015/863) | 
| ROHS China | Not Compliant | 
| Reach Status | Not Compliant | 
| Channel Mode | Enhancement | 
| Configuration | P-Channel | 
| Drain Source Voltage | 100V | 
| Drive Voltage | 10V | 
| FET Feature | N/R | 
| FET Options | N/R | 
| FET Type | Single | 
| Gate to Source Voltage | ±30V | 
| Input Capacitance | 250pF | 
| Input Capacitance Test Voltage | 25V | 
| Life Cycle Status | Last Time Buy | 
| Maximum Continuous Drain Current | 1A (Tc) | 
| Maximum Drain to Source Resistance | 1.05 Ohm @ 500mA, 10V | 
| Maximum Gate to Source Threshold Voltage | 4V @ 250µA | 
| Maximum Junction Temperature | 150°C (TJ) | 
| Maximum Operating Temperature | N/A | 
| Maximum Power Dissipation | 2W (Tc) | 
| Maximum Pulse Drain Current | 4A | 
| Maximum Total Gate Charge | 8.2nC | 
| Maximum Total Gate Charge Test Voltage | 10V | 
| Minimum Junction Temperature | -55°C (TJ) | 
| Minimum Operating Temperature | N/A | 
| Package Type | SOT-223 | 
| Technology | MOSFET (Metal Oxide) | 
| Typical Gate to Drain Charge | 3nC | 
| Typical Gate to Source Charge | 1.7nC | 
