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FQT3P20TF
onsemi

FQT3P20TF

MFR #FQT3P20TF

FPN#FQT3P20TF-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 200V 670mA (Tc) SOT223 T/R
Datasheet
136991-Datasheet
Quote Onlymore info
Multiples of: 4000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFQT3P20
Packaging TypeTape and Reel
Packaging Quantity4000
Lifecycle StatusLast Time Buy
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage200V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance250pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current670mA (Tc)
Maximum Drain to Source Resistance2.7 Ohm @ 335mA, 10V
Maximum Gate to Source Threshold Voltage5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.5W (Tc)
Maximum Pulse Drain Current2.7A
Maximum Total Gate Charge8nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeSOT-223
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.9nC
Typical Gate to Source Charge1.7nC