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FQT13N06TF
onsemi

FQT13N06TF

MFR #FQT13N06TF

FPN#FQT13N06TF-FL

MFRonsemi

Part DescriptionMOSFET N-CH 60V 2.8A SOT223-4
Datasheet
169936-Datasheet
Quote Onlymore info
Multiples of: 4000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFQT13N06
Packaging TypeTape and Reel
Packaging Quantity4000
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package TypeSOT-223
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±25V
Input Capacitance310pF
Input Capacitance Test Voltage25V
Maximum Continuous Drain Current2.8A (Tc)
Maximum Drain to Source Resistance140 mOhm @ 1.4A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation2.1W (Tc)
Maximum Pulse Drain Current11.2A
Maximum Total Gate Charge7.5nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.5nC
Typical Gate to Source Charge2nC