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FQS4900TF
onsemi

FQS4900TF

MFR #FQS4900TF

FPN#FQS4900TF-FL

MFRonsemi

Part DescriptionMosfet Array N and P-Channel 60V, 300V 1.3A, 300mA 2W Surface Mount 8-SOIC
Datasheet
45512-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFQS4900
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN and P-Channel
Drain Source Voltage60V, 300V
Drive Voltage4.5V, 10V
FET FeatureStandard
FET OptionsN/R
FET TypeArray
Gate to Source Voltage±20V
Input CapacitanceN/A
Input Capacitance Test VoltageN/A
Life Cycle StatusObsolete
Maximum Continuous Drain Current1.3A, 300mA
Maximum Drain to Source Resistance550 mOhm @ 650mA, 10V, 15.5 Ohm @ 150mA, 10V
Maximum Gate to Source Threshold Voltage1.95V @ 20mA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2W
Maximum Pulse Drain CurrentN/A
Maximum Total Gate Charge2.1nC
Maximum Total Gate Charge Test Voltage5V
Minimum Junction Temperature-55°C (TJ)
Package Type8-SOIC
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.1nC
Typical Gate to Source Charge820pC