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FQPF9P25YDTU
onsemi

FQPF9P25YDTU

MFR #FQPF9P25YDTU

FPN#FQPF9P25YDTU-FL

MFRonsemi

Part DescriptionP-Channel 250 V 6A (Tc) 50W (Tc) Through Hole TO-220F-3 (Y-Forming)
Datasheet
45511-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFQPF9P25YDTU
Packaging TypeTube
Packaging Quantity800
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage250V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance1180pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current6A (Tc)
Maximum Drain to Source Resistance620 mOhm @ 3A, 10V
Maximum Gate to Source Threshold Voltage5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation50W (Tc)
Maximum Pulse Drain Current24A
Maximum Total Gate Charge38nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-220F-3 (Y-Forming)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge14nC
Typical Gate to Source Charge7.6nC