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FQPF630
onsemi

FQPF630

MFR #FQPF630

FPN#FQPF630-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 200V 6.3A (Tc) 38W (Tc) Through Hole, TO-220-3
Datasheet
45502-Datasheet
Quote Onlymore info
Multiples of: 1000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFQPF630
Packaging TypeTube
Packaging Quantity1000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage200V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±25V
Input Capacitance550pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current6.3A (Tc)
Maximum Drain to Source Resistance400 mOhm @ 3.15A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation38W (Tc)
Maximum Pulse Drain Current25.2A
Maximum Total Gate Charge25nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-220-3 Fullpack/TO-220F-3SG
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge9.5nC
Typical Gate to Source Charge3nC