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FQPF47P06YDTU
onsemi

FQPF47P06YDTU

MFR #FQPF47P06YDTU

FPN#FQPF47P06YDTU-FL

MFRonsemi

Part DescriptionP-Channel 60 V 30A (Tc) 62W (Tc) Through Hole TO-220F-3 (Y-Forming)
Datasheet
99818-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFQPF47P06YDTU
Packaging TypeTube
Packaging Quantity800
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage60V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage25V
Input Capacitance3600pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current30A (Tc)
Maximum Drain to Source Resistance26 mOhm @ 15A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation62W (Tc)
Maximum Pulse Drain Current120A
Maximum Total Gate Charge110nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package TypeTO-220F-3 (Y-Forming)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge44nC
Typical Gate to Source Charge18nC