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FQPF30N06L
onsemi

FQPF30N06L

MFR #FQPF30N06L

FPN#FQPF30N06L-FL

MFRonsemi

Part DescriptionN-Channel 60 V 22.5A (Tc) 38W (Tc) Through Hole TO-220F-3
Datasheet
45494-Datasheet
Quote Onlymore info
Multiples of: 1000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFQPF30N06L
Packaging TypeTube
Packaging Quantity1000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage60V
Drive Voltage5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1040pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current22.5A (Tc)
Maximum Drain to Source Resistance35 mOhm @ 11.3A, 10V
Maximum Gate to Source Threshold Voltage2.5V @ 250µA
Maximum Junction Temperature175°C (TJ)
Maximum Power Dissipation38W (Tc)
Maximum Pulse Drain Current90A
Maximum Total Gate Charge20nC
Maximum Total Gate Charge Test Voltage5V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-220-3 Fullpack/TO-220F-3SG
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge8.5nC
Typical Gate to Source Charge3.5nC