(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
FQPF16N25C
onsemi

FQPF16N25C

MFR #FQPF16N25C

FPN#FQPF16N25C-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 250V 15.6A (Tc) TO-220-3 Tube
Datasheet
150250-Datasheet
Quote Onlymore info
Multiples of: 50more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFQPF16N25C
Packaging TypeTube
Packaging Quantity1000
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage250V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance1080pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current15.6A (Tc)
Maximum Drain to Source Resistance270 mOhm @ 7.8A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation43W (Tc)
Maximum Pulse Drain Current62.4A
Maximum Total Gate Charge53.5nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-220-3 Fullpack/TO-220F-3SG
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge22.7nC
Typical Gate to Source Charge5.6nC