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FQP3P20
onsemi

FQP3P20

MFR #FQP3P20

FPN#FQP3P20-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 200V 2.8A(Tc) 52W(Tc) Through Hole, TO-220-3
Datasheet
195468-Datasheet
Quote Only
more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFQP3P20
Packaging TypeTube
Packaging Quantity1000
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package TypeTO-220-3
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage200V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance250pF
Input Capacitance Test Voltage25V
Maximum Continuous Drain Current2.8A (Tc)
Maximum Drain to Source Resistance2.7 Ohm @ 1.4A, 10V
Maximum Gate to Source Threshold Voltage5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation52W (Tc)
Maximum Pulse Drain Current11.2A
Maximum Total Gate Charge8nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.9nC
Typical Gate to Source Charge1.7nC