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FQP3N80C
onsemi

FQP3N80C

MFR #FQP3N80C

FPN#FQP3N80C-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 800V 3A(Tc) 107W(Tc) Through Hole, TO-220-3
Datasheet
150249-Datasheet
Quote Onlymore info
Multiples of: 1000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFQP3N80C
Packaging TypeTube
Packaging Quantity1000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage800V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance705pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current3A (Tc)
Maximum Drain to Source Resistance4.8 Ohm @ 1.5A, 10V
Maximum Gate to Source Threshold Voltage5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation107W (Tc)
Maximum Pulse Drain Current12A
Maximum Total Gate Charge16.5nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-220-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge5.8nC
Typical Gate to Source Charge3.4nC