
onsemi
FQP16N25C-F105
MFR #FQP16N25C-F105
FPN#FQP16N25C-F105-FL
MFRonsemi
Part DescriptionMOSFET N-Channel 250V 15.6A (Tc) Through Hole, TO-220-3
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FQP16N25C |
| Lifecycle Status | Obsolete |
| ROHS | Compliant with Exemption |
| RoHs Exemption Type | 7(a), RoHS (2015/863) |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 250V |
| Drive Voltage | 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±30V |
| Input Capacitance | 1080pF |
| Input Capacitance Test Voltage | 25V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 15.6A (Tc) |
| Maximum Drain to Source Resistance | 270 mOhm @ 7.8A, 10V |
| Maximum Gate to Source Threshold Voltage | 4V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Operating Temperature | N/A |
| Maximum Power Dissipation | 139W (Tc) |
| Maximum Pulse Drain Current | 62.4A |
| Maximum Total Gate Charge | 53.5nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Minimum Operating Temperature | N/A |
| Package Type | TO-220-3 |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 22.7nC |
| Typical Gate to Source Charge | 5.6nC |
