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FQP16N25C-F105
onsemi

FQP16N25C-F105

MFR #FQP16N25C-F105

FPN#FQP16N25C-F105-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 250V 15.6A (Tc) Through Hole, TO-220-3
Datasheet
45467-Datasheet
Quote Onlymore info
Multiples of: 50more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFQP16N25C
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage250V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance1080pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current15.6A (Tc)
Maximum Drain to Source Resistance270 mOhm @ 7.8A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation139W (Tc)
Maximum Pulse Drain Current62.4A
Maximum Total Gate Charge53.5nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-220-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge22.7nC
Typical Gate to Source Charge5.6nC