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FQP12P20
onsemi

FQP12P20

MFR #FQP12P20

FPN#FQP12P20-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 200V 11.5A (Tc) Through Hole, TO-220-3
Datasheet
185611-Datasheet
Quote Onlymore info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFQP12P20
Packaging TypeTube
Packaging Quantity1000
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage200V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance1200pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current11.5A (Tc)
Maximum Drain to Source Resistance470 mOhm @ 5.75A, 10V
Maximum Gate to Source Threshold Voltage5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation120W (Tc)
Maximum Pulse Drain Current46A
Maximum Total Gate Charge40nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-220-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge11.5nC
Typical Gate to Source Charge8.1nC