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FQP12N60C
onsemi

FQP12N60C

MFR #FQP12N60C

FPN#FQP12N60C-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 600V 12A (Tc) 225W (Tc) Through Hole, TO-220-3
Datasheet
45461-Datasheet
Quote Onlymore info
Multiples of: 1000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFQP12N60C
Packaging TypeTube
Packaging Quantity1000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage600V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance2290pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current12A (Tc)
Maximum Drain to Source Resistance650 mOhm @ 6A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation225W (Tc)
Maximum Pulse Drain Current48A
Maximum Total Gate Charge63nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-220-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge21nC
Typical Gate to Source Charge8.5nC