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FQN1N60CTA-G
onsemi

FQN1N60CTA-G

MFR #FQN1N60CTA-G

FPN#FQN1N60CTA-G-FL

MFRonsemi

Part DescriptionPower MOSFET, N-Channel, QFET, 600 V, 0.3 A, 11.5 ?, TO-92
Datasheet
45460-Datasheet
Quote Onlymore info
Multiples of: 2000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFQN1N60C
Packaging TypeFan-Fold
Packaging Quantity2000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage600V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance170pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current300mA (Tc)
Maximum Drain to Source Resistance11.5 Ohm @ 150mA, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation1W (Ta), 3W (Tc)
Maximum Pulse Drain Current1.2A
Maximum Total Gate Charge6.2nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-92-3
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge2.7nC
Typical Gate to Source Charge700pC