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FQI8N60CTU
MFR #FQI8N60CTU
FPN#FQI8N60CTU-FL
MFRonsemi
Part DescriptionN-Channel 600 V 7.5A (Tc) 3.13W (Ta), 147W (Tc) Through Hole I2PAK (TO-262)
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FQI8N60C |
| Packaging Type | Tube |
| Packaging Quantity | 1000 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 600V |
| Drive Voltage | 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±30V |
| Input Capacitance | 1255pF |
| Input Capacitance Test Voltage | 25V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 7.5A (Tc) |
| Maximum Drain to Source Resistance | 1.2 Ohm @ 3.75A, 10V |
| Maximum Gate to Source Threshold Voltage | 4V @ 250µA |
| Maximum Junction Temperature | 150°C (TJ) |
| Maximum Power Dissipation | 3.13W (Ta), 147W (Tc) |
| Maximum Pulse Drain Current | 30A |
| Maximum Total Gate Charge | 36nC |
| Maximum Total Gate Charge Test Voltage | 10V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | I2PAK (TO-262) |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 12nC |
| Typical Gate to Source Charge | 4.5nC |