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FQI7N80TU
onsemi

FQI7N80TU

MFR #FQI7N80TU

FPN#FQI7N80TU-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 800V 6.6A (Tc) 3.13W (Ta), 167W (Tc) Through Hole, TO-262-3
Datasheet
45457-Datasheet
Quote Onlymore info
Multiples of: 1000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFQI7N80
Packaging TypeTube
Packaging Quantity1000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage800V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance1850pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current6.6A (Tc)
Maximum Drain to Source Resistance1.5 Ohm @ 3.3A, 10V
Maximum Gate to Source Threshold Voltage5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation3.13W (Ta), 167W (Tc)
Maximum Pulse Drain Current26.4A
Maximum Total Gate Charge52nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeI2PAK (TO-262)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge20nC
Typical Gate to Source Charge8.5nC