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FQI7N60TU
MFR #FQI7N60TU
FPN#FQI7N60TU-FL
MFRonsemi
Part DescriptionN-Channel 600 V 7.4A (Tc) 3.13W (Ta), 142W (Tc) Through Hole I2PAK (TO-262)
Datasheet
Quote Only
Product Attributes
Main Category | Semiconductors |
Category | Discrete Semiconductors |
Sub Category | Transistors |
Family Name | FQI7N60 |
Packaging Type | Tube |
Packaging Quantity | 1000 |
Lifecycle Status | Last Time Buy |
RoHS | Compliant with Exemption |
RoHS Exemption Type | 7(a), RoHS (2015/863) |
ROHS China | Not Compliant |
Reach Status | Not Compliant |
Channel Mode | Enhancement |
Configuration | N-Channel |
Drain Source Voltage | 600V |
Drive Voltage | 10V |
FET Feature | N/R |
FET Options | N/R |
FET Type | Single |
Gate to Source Voltage | ±30V |
Input Capacitance | 1430pF |
Input Capacitance Test Voltage | 25V |
Life Cycle Status | Last Time Buy |
Maximum Continuous Drain Current | 7.4A (Tc) |
Maximum Drain to Source Resistance | 1 Ohm @ 3.7A, 10V |
Maximum Gate to Source Threshold Voltage | 5V @ 250µA |
Maximum Junction Temperature | 150°C (TJ) |
Maximum Power Dissipation | 3.13W (Ta), 142W (Tc) |
Maximum Pulse Drain Current | 29.6A |
Maximum Total Gate Charge | 38nC |
Maximum Total Gate Charge Test Voltage | 10V |
Minimum Junction Temperature | -55°C (TJ) |
Package Type | I2PAK (TO-262) |
Technology | MOSFET (Metal Oxide) |
Typical Gate to Drain Charge | 14.5nC |
Typical Gate to Source Charge | 7nC |