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FQD9N25TM-F085
onsemi

FQD9N25TM-F085

MFR #FQD9N25TM-F085

FPN#FQD9N25TM-F085-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 250V 7.4A (Tc) 2.5W (Ta), 55W (Tc) Surface Mount, TO-252-3
Datasheet
45453-Datasheet
Quote Onlymore info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFQD9N25TM-F085
Packaging TypeN/A
Packaging QuantityN/A
Lifecycle StatusObsolete
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage250V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance700pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current7.4A (Tc)
Maximum Drain to Source Resistance420 mOhm @ 3.7A, 10V
Maximum Gate to Source Threshold Voltage5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 55W (Tc)
Maximum Pulse Drain Current29.6A
Maximum Total Gate Charge20nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-252, (D-Pak)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge8.5nC
Typical Gate to Source Charge3.8nC