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onsemi

FQD6N50CTM

MFR #FQD6N50CTM

FPN#FQD6N50CTM-FL

MFRonsemi

Part DescriptionPower Field-Effect Transistor, 4.5A I(D), 500V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Datasheet
192675-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFQD6N50C
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage500V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance700pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current4.5A (Tc)
Maximum Drain to Source Resistance1.2 Ohm @ 2.25A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation2.5W (Ta), 61W (Tc)
Maximum Pulse Drain Current18A
Maximum Total Gate Charge25nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
Package TypeTO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge8.8nC
Typical Gate to Source Charge2.8nC