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FQD12N20LTM
onsemi

FQD12N20LTM

MFR #FQD12N20LTM

FPN#FQD12N20LTM-FL

MFRonsemi

Part DescriptionMOSFET N-Channel 200V 9A (Tc) TO-252-3 T/R
Datasheet
136979-Datasheet
Quote Onlymore info
Multiples of: 2500more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFQD12N20L
Packaging TypeTape and Reel
Packaging Quantity2500
Lifecycle StatusActive
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage200V
Drive Voltage5V, 10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±20V
Input Capacitance1080pF
Input Capacitance Test Voltage25V
Life Cycle StatusActive
Maximum Continuous Drain Current9A (Tc)
Maximum Drain to Source Resistance280 mOhm @ 4.5A, 10V
Maximum Gate to Source Threshold Voltage2V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation2.5W (Ta), 55W (Tc)
Maximum Pulse Drain Current36A
Maximum Total Gate Charge21nC
Maximum Total Gate Charge Test Voltage5V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-252 (DPAK)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge7.6nC
Typical Gate to Source Charge2.8nC