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FQB5N60CTM-WS
onsemi

FQB5N60CTM-WS

MFR #FQB5N60CTM-WS

FPN#FQB5N60CTM-WS-FL

MFRonsemi

Part DescriptionN-Channel 600 V 4.5A (Tc) 100W (Tc) Surface Mount DPAK (TO-263)
Datasheet
45437-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFQB5N60CTM_WS
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage600V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance670pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current4.5A (Tc)
Maximum Drain to Source Resistance2.5 Ohm @ 2.25A, 10V
Maximum Gate to Source Threshold Voltage4V @ 250µA
Maximum Junction TemperatureN/A
Maximum Power Dissipation100W (Tc)
Maximum Pulse Drain Current18A
Maximum Total Gate Charge19nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction TemperatureN/A
Package TypeD2PAK (TO-263)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge6.6nC
Typical Gate to Source Charge2.5nC