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FQB50N06LTM
MFR #FQB50N06LTM
FPN#FQB50N06LTM-FL
MFRonsemi
Part DescriptionPower Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Datasheet
Quote Only
Product Attributes
| Main Category | Semiconductors |
| Category | Discrete Semiconductors |
| Sub Category | Transistors |
| Family Name | FQB50N06L |
| Packaging Type | Tape and Reel |
| Packaging Quantity | 800 |
| Lifecycle Status | Obsolete |
| RoHS | Compliant with Exemption |
| RoHS Exemption Type | 7(a), RoHS (2015/863) |
| ROHS China | Not Compliant |
| Reach Status | Not Compliant |
| Channel Mode | Enhancement |
| Configuration | N-Channel |
| Drain Source Voltage | 60V |
| Drive Voltage | 5V, 10V |
| FET Feature | N/R |
| FET Options | N/R |
| FET Type | Single |
| Gate to Source Voltage | ±20V |
| Input Capacitance | 1630pF |
| Input Capacitance Test Voltage | 25V |
| Life Cycle Status | Obsolete |
| Maximum Continuous Drain Current | 52.4A (Tc) |
| Maximum Drain to Source Resistance | 21 mOhm @ 26.2A, 10V |
| Maximum Gate to Source Threshold Voltage | 2.5V @ 250µA |
| Maximum Junction Temperature | 175°C (TJ) |
| Maximum Power Dissipation | 3.75W (Ta), 121W (Tc) |
| Maximum Pulse Drain Current | 210A |
| Maximum Total Gate Charge | 32nC |
| Maximum Total Gate Charge Test Voltage | 5V |
| Minimum Junction Temperature | -55°C (TJ) |
| Package Type | TO-263 (D2PAK) |
| Technology | MOSFET (Metal Oxide) |
| Typical Gate to Drain Charge | 14.5nC |
| Typical Gate to Source Charge | 6nC |