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FQB25N33TM-F085
onsemi

FQB25N33TM-F085

MFR #FQB25N33TM-F085

FPN#FQB25N33TM-F085-FL

MFRonsemi

Part DescriptionN-Channel 330 V 25A (Tc) 3.1W (Ta), 250W (Tc) Surface Mount DPAK (TO-263)
Datasheet
45432-Datasheet
Quote Onlymore info
Multiples of: 800more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFQB25N33TM_F085
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage330V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance2010pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current25A (Tc)
Maximum Drain to Source Resistance230 mOhm @ 12.5A, 10V
Maximum Gate to Source Threshold Voltage5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation3.1W (Ta), 250W (Tc)
Maximum Pulse Drain Current100A
Maximum Total Gate Charge75nC
Maximum Total Gate Charge Test Voltage15V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-263 (D2PAK)
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge21nC
Typical Gate to Source Charge11.2nC