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onsemi

FQB1P50TM

MFR #FQB1P50TM

FPN#FQB1P50TM-FL

MFRonsemi

Part DescriptionMOSFET P-Channel 500V 1.5A(Tc) 3.13W(Ta) 63W(Tc) Surface Mount, TO-263-3
Datasheet
192863-Datasheet
Quote Only
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Multiples of: 800
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Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFQB1P50
Packaging TypeTape and Reel
Packaging Quantity800
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
Package TypeTO-263 (D2PAK)
Channel ModeEnhancement
ConfigurationP-Channel
Drain Source Voltage500V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance350pF
Input Capacitance Test Voltage25V
Maximum Continuous Drain Current1.5A (Tc)
Maximum Drain to Source Resistance10.5 Ohm @ 750mA, 10V
Maximum Gate to Source Threshold Voltage5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation3.13W (Ta), 63W (Tc)
Maximum Pulse Drain Current6A
Maximum Total Gate Charge14nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Minimum Operating TemperatureN/A
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge5.6nC
Typical Gate to Source Charge2nC