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FQA16N50-F109
onsemi

FQA16N50-F109

MFR #FQA16N50-F109

FPN#FQA16N50-F109-FL

MFRonsemi

Part DescriptionN-Channel 500 V 16A (Tc) 200W (Tc) Through Hole TO-3P
Datasheet
45421-Datasheet
Quote Onlymore info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFQA16N50
Packaging TypeN/A
Packaging QuantityN/A
Lifecycle StatusObsolete
Reach StatusCompliant
Channel ModeEnhancement
ConfigurationN-Channel
Drain Source Voltage500V
Drive Voltage10V
FET FeatureN/R
FET OptionsN/R
FET TypeSingle
Gate to Source Voltage±30V
Input Capacitance3000pF
Input Capacitance Test Voltage25V
Life Cycle StatusObsolete
Maximum Continuous Drain Current16A (Tc)
Maximum Drain to Source Resistance320 mOhm @ 8A, 10V
Maximum Gate to Source Threshold Voltage5V @ 250µA
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation200W (Tc)
Maximum Pulse Drain Current64A
Maximum Total Gate Charge75nC
Maximum Total Gate Charge Test Voltage10V
Minimum Junction Temperature-55°C (TJ)
Package TypeTO-3PN
TechnologyMOSFET (Metal Oxide)
Typical Gate to Drain Charge28nC
Typical Gate to Source Charge14nC