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onsemi

FPF2G120BF07ASP

MFR #FPF2G120BF07ASP

FPN#FPF2G120BF07ASP-FL

MFRonsemi

Part DescriptionIGBT Module Field Stop 3 Independent 650 V 40 A 156 W Through Hole F2
Datasheet
45413-Datasheet
Quote Onlymore info
Multiples of: 14more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFPF2G120BF07ASP
Packaging TypeTray
Packaging Quantity14
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Configuration3 Independent
IGBT TypeField Stop
Input CapacitanceN/A
Input TypeStandard
Life Cycle StatusObsolete
Maximum Collector Current40A
Maximum Collector Emitter Breakdown Voltage650V
Maximum Collector Emitter Saturation Voltage2.2V @ 15V, 40A
Maximum Cutoff Collector Current250µA
Maximum Gate Emitter Voltage±20V
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation156W
Minimum Junction Temperature-40°C (TJ)
NTC ThermistorYes
Package TypeF2