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FJV3114RMTF
onsemi

FJV3114RMTF

MFR #FJV3114RMTF

FPN#FJV3114RMTF-FL

MFRonsemi

Part DescriptionPre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount SOT-23-3
Datasheet
45103-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFJV3114R
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Base Resistance - R14.7 kOhm
ConfigurationNPN - Pre-Biased
Emitter Base Resistance - R247 kOhm
Gain Bandwidth250MHz
Life Cycle StatusObsolete
Maximum Collector Base Voltage50V
Maximum Collector Current100mA
Maximum Collector Emitter Breakdown Voltage50V
Maximum Collector Emitter Saturation Voltage300mV @ 500µA, 10mA
Maximum Cutoff Collector Current100nA (ICBO)
Maximum Emitter Base Voltage10V
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation200mW
Minimum DC Current Gain68 @ 5mA, 5V
Minimum Junction TemperatureN/A
Package TypeSOT-23-3
Resistor Ratio R1 R20.1
Technology TypeSI
Transistor TypeSingle