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FJV3113RMTF
onsemi

FJV3113RMTF

MFR #FJV3113RMTF

FPN#FJV3113RMTF-FL

MFRonsemi

Part DescriptionPre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 250 MHz 200 mW Surface Mount SOT-23-3 (TO-236)
Datasheet
45102-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFJV3113R
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
ROHSCompliant
RoHs Exemption TypeNone, RoHS (2015/863)
RoHs ChinaCompliant
Reach StatusCompliant
Base Resistance - R12.2 kOhm
ConfigurationNPN - Pre-Biased
Emitter Base Resistance - R247 kOhm
Gain Bandwidth250MHz
Life Cycle StatusObsolete
Maximum Collector Base Voltage50V
Maximum Collector Current100mA
Maximum Collector Emitter Breakdown Voltage50V
Maximum Collector Emitter Saturation Voltage300mV @ 500µA, 10mA
Maximum Cutoff Collector Current100nA (ICBO)
Maximum Emitter Base Voltage10V
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation200mW
Minimum DC Current Gain68 @ 5mA, 5V
Minimum Junction TemperatureN/A
Minimum Operating TemperatureN/A
Package TypeSOT-23-3
Resistor Ratio R1 R20.047
Technology TypeSI
Transistor TypeSingle