(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
FJV3110RMTF
onsemi

FJV3110RMTF

MFR #FJV3110RMTF

FPN#FJV3110RMTF-FL

MFRonsemi

Part DescriptionPre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 40 V 100 mA 250 MHz 200 mW Surface Mount SOT-23-3
Datasheet
45101-Datasheet
Quote Onlymore info
Multiples of: 3000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFJV3110R
Packaging TypeTape and Reel
Packaging Quantity3000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Base Resistance - R110 kOhm
ConfigurationNPN - Pre-Biased
Emitter Base Resistance - R2N/A
Gain Bandwidth250MHz
Life Cycle StatusObsolete
Maximum Collector Base Voltage40V
Maximum Collector Current100mA
Maximum Collector Emitter Breakdown Voltage40V
Maximum Collector Emitter Saturation Voltage300mV @ 1mA, 10mA
Maximum Cutoff Collector Current100nA (ICBO)
Maximum Emitter Base Voltage5V
Maximum Junction Temperature150°C (TJ)
Maximum Power Dissipation200mW
Minimum DC Current Gain100 @ 1mA, 5V
Minimum Junction TemperatureN/A
Package TypeSOT-23-3
Resistor Ratio R1 R2N/A
Technology TypeSI
Transistor TypeSingle