(404) 551-4447EMEA TeamContact UsAbout UsCareers
loading content
FJP5027RTU
onsemi

FJP5027RTU

MFR #FJP5027RTU

FPN#FJP5027RTU-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 800 V 3 A 15MHz 50 W Through Hole TO-220-3
Datasheet
45083-Datasheet
Quote Onlymore info
Multiples of: 1000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFJP5027
Packaging TypeTube
Packaging Quantity1000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationNPN
Gain Bandwidth15MHz
Life Cycle StatusObsolete
Maximum Collector Current3A
Maximum Collector Emitter Breakdown Voltage800V
Maximum Collector Emitter Saturation Voltage2V @ 300mA, 1.5A
Maximum Cutoff Collector Current10µA (ICBO)
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation50W
Minimum DC Current Gain15 @ 200mA, 5V
Minimum Operating TemperatureN/A
Package TypeTO-220-3
Technology TypeSI
Transistor TypeSingle