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FJP3307DTU
onsemi

FJP3307DTU

MFR #FJP3307DTU

FPN#FJP3307DTU-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 400 V 8 A - 80 W Through Hole TO-220-3
Datasheet
45082-Datasheet
Quote Onlymore info
Multiples of: 1000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFJP3307D
Packaging TypeTube
Packaging Quantity1000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationNPN
Gain BandwidthN/A
Life Cycle StatusObsolete
Maximum Collector Current8A
Maximum Collector Emitter Breakdown Voltage400V
Maximum Collector Emitter Saturation Voltage3V @ 2A, 8A
Maximum Cutoff Collector CurrentN/A
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation80W
Minimum DC Current Gain8 @ 2A, 5V
Minimum Operating TemperatureN/A
Package TypeTO-220-3
Technology TypeN/A
Transistor TypeSingle