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FJP2160DTU
onsemi

FJP2160DTU

MFR #FJP2160DTU

FPN#FJP2160DTU-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 800 V 2 A 5MHz 100 W Through Hole TO-220-3
Datasheet
45079-Datasheet
Quote Onlymore info
Multiples of: 1000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFJP2160D
Packaging TypeTube
Packaging Quantity1000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationNPN
Gain Bandwidth5MHz
Life Cycle StatusObsolete
Maximum Collector Current2A
Maximum Collector Emitter Breakdown Voltage800V
Maximum Collector Emitter Saturation Voltage450mV @ 50mA, 250mA
Maximum Cutoff Collector Current100µA
Maximum Operating Temperature125°C (TJ)
Maximum Power Dissipation100W
Minimum DC Current Gain20 @ 400mA, 3V
Minimum Operating Temperature-55°C (TJ)
Package TypeTO-220-3
Technology TypeSI
Transistor TypeSingle