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FJP13007H1TU-F080
onsemi

FJP13007H1TU-F080

MFR #FJP13007H1TU-F080

FPN#FJP13007H1TU-F080-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 400 V 8 A 4MHz 80 W Through Hole TO-220-3
Datasheet
45074-Datasheet
Quote Onlymore info
Multiples of: 50more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFJP13007
Packaging TypeRail
Packaging QuantityN/A
Lifecycle StatusObsolete
ROHSCompliant with Exemption
RoHs Exemption Type7(a), RoHS (2015/863)
RoHs ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationNPN
Gain Bandwidth4MHz
Life Cycle StatusObsolete
Maximum Collector Current8A
Maximum Collector Emitter Breakdown Voltage400V
Maximum Collector Emitter Saturation Voltage3V @ 2A, 8A
Maximum Cutoff Collector CurrentN/A
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation80W
Minimum DC Current Gain15 @ 2A, 5V
Minimum Operating TemperatureN/A
Package TypeTO-220-3
Technology TypeN/A
Transistor TypeSingle