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FJN4301RTA
onsemi

FJN4301RTA

MFR #FJN4301RTA

FPN#FJN4301RTA-FL

MFRonsemi

Part DescriptionPre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 300 mW Through Hole TO-92-3
Datasheet
45069-Datasheet
Quote Onlymore info
Multiples of: 2000more info
Prices are in USD
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Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFJN4301R
Packaging TypeFan-Fold
Packaging Quantity2000
Lifecycle StatusObsolete
RoHSCompliant
RoHS Exemption TypeNone, RoHS (2015/863)
ROHS ChinaCompliant
Reach StatusCompliant
Base Resistance - R14.7 kOhm
ConfigurationPNP - Pre-Biased
Emitter Base Resistance - R24.7 kOhm
Gain Bandwidth200MHz
Life Cycle StatusObsolete
Maximum Collector Base Voltage50V
Maximum Collector Current100mA
Maximum Collector Emitter Breakdown Voltage50V
Maximum Collector Emitter Saturation Voltage300mV @ 500µA, 10mA
Maximum Cutoff Collector Current100nA (ICBO)
Maximum Emitter Base Voltage10V
Maximum Junction Temperature150°C (TJ)
Maximum Operating TemperatureN/A
Maximum Power Dissipation300mW
Minimum DC Current Gain20 @ 10mA, 5V
Minimum Junction TemperatureN/A
Minimum Operating TemperatureN/A
Package TypeTO-92
Resistor Ratio R1 R21
Technology TypeSI
Transistor TypeSingle