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FJE5304D
onsemi

FJE5304D

MFR #FJE5304D

FPN#FJE5304D-FL

MFRonsemi

Part DescriptionBipolar (BJT) Transistor NPN 400 V 4 A 30 W Through Hole TO-126-3
Datasheet
45064-Datasheet
Quote Onlymore info
Multiples of: 2000more info
Prices are in USD
Flip Electronics may assess a Tariff Recovery Fee relating to Tariffs on subject countries, including but not limited to China. The final charge will be included on Flip’s invoice. Flip Electronics reserves the right to assess this charge whenever a tariff is incurred or as additional country of origin information is known, even if no Tariff Recovery Fee is initially quoted.

Product Attributes

Main CategorySemiconductors
CategoryDiscrete Semiconductors
Sub CategoryTransistors
Family NameFJE5304D
Packaging TypeBag
Packaging Quantity2000
Lifecycle StatusObsolete
RoHSCompliant with Exemption
RoHS Exemption Type7(a), RoHS (2015/863)
ROHS ChinaNot Compliant
Reach StatusNot Compliant
ConfigurationNPN
Gain BandwidthN/A
Life Cycle StatusObsolete
Maximum Collector Current4A
Maximum Collector Emitter Breakdown Voltage400V
Maximum Collector Emitter Saturation Voltage700mV @ 100mA, 500mA
Maximum Cutoff Collector Current100µA
Maximum Operating Temperature150°C (TJ)
Maximum Power Dissipation30W
Minimum DC Current Gain10 @ 10mA, 5V
Minimum Operating Temperature-65°C (TJ)
Package TypeTO-126-3
Technology TypeSI
Transistor TypeSingle